EDE5108ABSE Datasheet - Elpida Memory

EDE5108ABSE (EDE51xxABSE) 512M bits DDR2 SDRAM

The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 64-ball FBGA (µBGA) package. The EDE5116ABSE is a 512M bits DDR2 SDRAM organized as 8,388,608 .

EDE5108ABSE Features

* Power supply: VDD, VDDQ = 1.8V ± 0.1V

* Double-data-rate architecture: two data transfers per clock cycle

* Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver

* DQS is edge aligned

EDE5108ABSE_ElpidaMemory.pdf