Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC Row Select VSS Memory Array 1024 x 2048 I/O0 ~ I/O7 Data Cont
www.DataSheet4U.com EM620FV8B Series Low Power, 256Kx8 SRAM Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
0.0 0.1 0.2 0.3 History Initial Draft 0.1 Revision 0.2 Revision 0.3 Revision Remove BYTE option information Remove UB, LB information Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) VIH level change from 2.0V to
EM620FV8B Features
* - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FV8B : 2.7~3.6V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bar
EM620FV8B_EmergingMemory&LogicSolutions.pdf
Datasheet Details
EM620FV8B
Emerging Memory & Logic Solutions
454.92 KB
256k x 8 bit low power and low voltage full cmos static ram.
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