| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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SUMITOMO ELECTRIC Device Innovations Inc | FLC097WF | Bristol Electronics | 11 | 0 |
$0
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Download Datasheet (114.65 KB)
FLC097WF
Eudyna Devices
114.65 KB
C-band power gaas fet.
FEATURES
* High Output Power: P1dB = 28.8dBm (Typ.) * High Gain: G1dB = 8.5dB(Typ.) * High PAE: ηadd.
The FLC097WF is a power GaAs FET that is designed for general purpose applications in the C-Band fre.
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FUJITSU Limited
|
| FLC097WF |
|
RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
|
| Quest Components |
| 4 In Stock |
| Qty : 5 units |
|
Unit Price : $62.7
|
| 🛒 Buy Now |
