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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL816 Series
Schematic
Features:
• Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) (CTR: 63~320% at IF =10mA, VCE =5V) • High isolation voltage between inputs and output (Viso=5000 V rms) • Creepage distance >7.62 mm • Operating temperature up to +110°C • Compact small outline package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved
Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector
Description
The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.