EL816A
Features
:
- Current transfer ratio (CTR: 50~600% at IF =5m A, VCE =5V) (CTR: 63~320% at IF =10m A, VCE =5V)
- High isolation voltage between inputs and output (Viso=5000 V rms)
- Creepage distance >7.62 mm
- Operating temperature up to +110°C
- pact small outline package
- Pb free and Ro HS pliant.
- UL approved (No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved
- FIMKO approved
- CSA approved
Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector
Description
The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
- Programmable controllers
- System appliances, measuring instruments
- Telemunication equipments
- Home appliances, such as fan heaters, etc.
- Signal transmission between circuits of different potentials and impedances
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