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EL2501-G

4 Pin Dip Phototransistor

EL2501-G Features

* Halogens free.

* Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V)

* High isolation voltage between input and output (Viso=5000 V rms )

* Creepage distance >7.62 mm

* Operating temperature up to +110°C

* Compact small outline package

EL2501-G General Description

The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. www.DataSheet.co.kr Applications

* Progr.

EL2501-G Datasheet (719.72 KB)

Preview of EL2501-G PDF

Datasheet Details

Part number:

EL2501-G

Manufacturer:

Everlight

File Size:

719.72 KB

Description:

4 pin dip phototransistor.

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TAGS

EL2501-G Pin Dip Phototransistor Everlight

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