EL2501-G Datasheet - Everlight

EL2501-G 4 Pin Dip Phototransistor

The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. www.DataSheet.co.kr Applications * Progr.

EL2501-G Features

* Halogens free.

* Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V)

* High isolation voltage between input and output (Viso=5000 V rms )

* Creepage distance >7.62 mm

* Operating temperature up to +110°C

* Compact small outline package

EL2501-G_Everlight.pdf