TPGEW1S03H, TPGEW1S09H Datasheet - Excelitas

TPGEW1S03H, TPGEW1S09H, Low-Cost High-Power Laser-Diode

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.
PGEW1SXXH Single chip laser. Single epi-cavity DPGEW1SXXH Single chip laser. Double epi-cavity TPGEW1SXXH Single chip laser.

Features

* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
* Peak power over 100 W at 20 ns pulse width
* High reliability
* Small emitting areas increase fiber coupled output
* Lower cost plastic packaging for high volume

Applications

* Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers.

TPGEW1S09H-Excelitas.pdf