TPGEW1S09H - Low-Cost High-Power Laser-Diode

Excelitas

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Datasheet Details

Part number	TPGEW1S09H
Manufacturer	Excelitas
File Size	659.76 KB
Description	Low-Cost High-Power Laser-Diode
Datasheet	TPGEW1S09H-Excelitas.pdf

TPGEW1S09H Product details

Description

PGEW1SXXH Single chip laser Single epi-cavity DPGEW1SXXH Single chip laser Double epi-cavity TPGEW1SXXH Single chip laser Triple epi-cavity QPGEW1SXXH Single chip laser Quad epi-cavity Total # of emitting stripes 1 Typical peak power at iFM, 100 ns, 10A 3 mils (75 µm) stripe width at iFM, 100 ns, 30A 9 mils (225 µm) stripe width 6.5 W 23 W 2 13 W 45 W 3 20 W 70 W 4 25 W 85 W Table 2: Maximum Ratings Parameter Peak reverse voltage Pulse dur

Features

Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area.
Peak power over 100 W at 20 ns pulse width.
High reliability.
Small emitting areas increase fiber coupled output.
Lower cost plastic packaging for high volume.
RoHS compliant.

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