EMD04N65A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
650V
D
RDSON (MAX.)
2.75Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N65CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
650V
D
RDSON (MAX.)
2.75Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60AB - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
2.4Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60AK - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
3.3Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
2.5Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60CSB - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
2.4Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60CSK - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
3.3Ω
ID
4A
G
UIS, 100% Tested
S
.
EMD04N60F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
2.5Ω
ID
4A
G
UIS, 100% Tested
S
.