Datasheet4U Logo Datasheet4U.com

EMDE0N20A Datasheet - Excelliance MOS

EMDE0N20A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 0.5Ω ID 5A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 1mH, ID=1.5A, RG=25Ω L = 0.5mH Power Dissipation TC.

EMDE0N20A Datasheet (214.33 KB)

Preview of EMDE0N20A PDF
EMDE0N20A Datasheet Preview Page 2 EMDE0N20A Datasheet Preview Page 3

Datasheet Details

Part number:

EMDE0N20A

Manufacturer:

Excelliance MOS

File Size:

214.33 KB

Description:

Mosfet.

📁 Related Datasheet

EMDE0N20C MOSFET (Excelliance MOS)

EMDE0N20CS MOSFET (Excelliance MOS)

EMDE0N20E MOSFET (Excelliance MOS)

EMDE0N20F MOSFET (Excelliance MOS)

EMDE0N20G MOSFET (Excelliance MOS)

EMD02N06E MOSFET (Excelliance MOS)

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMDE0N20A MOSFET Excelliance MOS

EMDE0N20A Distributor