EMF20N02J Datasheet - Excelliance MOS

EMF20N02J N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 20V RDSON (MAX.) 20mΩ ID 6A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMF20N02J LIMITS ±12 6 4 24 .

EMF20N02J-ExcellianceMOS.pdf

EMF20N02J Datasheet Preview — Preview of EMF20N02J PDF

Datasheet Details

Part number:

EMF20N02J

Manufacturer:

Excelliance MOS

File Size:

175.78 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMF20N02J EMF20N02J N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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