EMF20A02G Datasheet (Excelliance MOS) - Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor

EMF20A02G, Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor

EMF20A02G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 6A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power D