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EMF20A02G Datasheet - Excelliance MOS

EMF20A02G Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor

EMF20A02G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 6A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power D.

EMF20A02G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMF20A02G

Manufacturer:

Excelliance MOS

File Size:

223.95 KB

Description:

Dual n?channel logic level enhancement mode field effect transistor.

EMF20A02G Distributor

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EMF20A02G EMF20A02G Dual N ?Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS