EMF20B02G Datasheet - Excelliance MOS

EMF20B02G MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 20mΩ ID ‐8.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF20B02G LIMITS ±12 ‐8.5 ‐6 ‐34 .

EMF20B02G Datasheet (188.30 KB)

EMF20B02G Datasheet Preview — Preview of EMF20B02G PDF

Datasheet Details

Part number:

EMF20B02G

Manufacturer:

Excelliance MOS

File Size:

188.30 KB

Description:

Mosfet.

📁 Related Datasheet

EMF20B02V P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF20 Power management (Rohm)

EMF20A02G Dual N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF20A02V MOSFET (Excelliance MOS)

EMF20C02G MOSFET (Excelliance MOS)

EMF20N02J N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF20N02JS MOSFET (Excelliance MOS)

EMF20N02K N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMF20B02G MOSFET Excelliance MOS

EMF20B02G Distributor