EMF30C02G Datasheet - Excelliance MOS

EMF30C02G MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 30.5mΩ 100mΩ ID 6.5A ‐4.2A EMF30C02G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID ID.

EMF30C02G Datasheet (265.06 KB)