Datasheet4U Logo Datasheet4U.com

EMF30N02A Datasheet - Excelliance MOS

EMF30N02A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 30mΩ ID 10A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF30N02A LIMITS ±12 10 7 40.

EMF30N02A Datasheet (225.29 KB)

Preview of EMF30N02A PDF
EMF30N02A Datasheet Preview Page 2 EMF30N02A Datasheet Preview Page 3

Datasheet Details

Part number:

EMF30N02A

Manufacturer:

Excelliance MOS

File Size:

225.29 KB

Description:

Mosfet.

📁 Related Datasheet

EMF30N02H MOSFET (Excelliance MOS)

EMF30N02J N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF30N02JS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF30N02P N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF30C02G MOSFET (Excelliance MOS)

EMF30C02K MOSFET (Excelliance MOS)

EMF30G02K MOSFET (Excelliance MOS)

EMF32 Power management (Rohm)

TAGS

EMF30N02A MOSFET Excelliance MOS

EMF30N02A Distributor