EMZF14R02W Datasheet - Excelliance MOS

EMZF14R02W Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 14mΩ ID 9.5A Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMZF14R02W LIMIT.

EMZF14R02W-ExcellianceMOS.pdf