EMZF50P02J Datasheet - Excelliance MOS

EMZF50P02J MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 44mΩ ID ‐4A Pb‐Free Lead Plating & Halogen Free ESD Protection up to 2KV HBM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMZF50P02J LIMITS UNIT Gate‐Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM ‐4 ‐3.5 ‐16 Power Dissipation .

EMZF50P02J-ExcellianceMOS.pdf