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EFA080A Datasheet - Execelies

EFA080A Low Distortion GaAs Power FET

www.DataSheet4U.com Excelics DATA SHEET +26.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE 50 D EFA080A Low Distortion GaAs Power FET 510 116 D 48 340 100 40 S G S G S 95 50 80 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G.

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EFA080A

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Execelies

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153.21 KB

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Low distortion gaas power fet.

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EFA080A EFA080A Low Distortion GaAs Power FET Execelies

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