Excelics PRELIMINARY DATA SHEET www.DataSheet4U.com EFA072A Low Distortion GaAs Power FET +25.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C.