EFA720A - Low Distortion GaAs Power FET
www.DataSheet4U.com Excelics DATA SHEET +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 120mA PER BIN RANGE ' EFA720A Low Distortion GaAs Power FET ' ' 6 6 6 6 ELE
