Datasheet Specifications
- Part number
- EFA120D-SOT89
- Manufacturer
- ETC
- File Size
- 29.62 KB
- Datasheet
- EFA120D-SOT89_ETC.pdf
- Description
- Low Distortion GaAs Power FET
Description
Excelics PRELIMINARY DATA SHEET EFA120D-SOT89 DC-4GHz 177-183 65-75 SOURCE Low Distortion GaAs Power FET * * * *
Features
* LOW COST SURFACE-MOUNT PLASTIC PACKAGE +28.0dBm TYPICAL OUTPUT POWER 14.0dB TYPICAL POWER GAIN AT 2GHz 0.7dB TYPICAL NOISE FIGURE AT 2GHz +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIApplications
* Analog and Digital Wireless System HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=7V, Ids=180mA Gain at 1dB Compression f = 2GHz Vds=7V, Ids=EFA120D-SOT89 Distributors
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