* LOW COST SURFACE-MOUNT PLASTIC PACKAGE +28.0dBm TYPICAL OUTPUT POWER 14.0dB TYPICAL POWER GAIN AT 2GHz 0.7dB TYPICAL NOISE FIGURE AT 2GHz +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HI
EFA120D-SOT89 Datasheet (29.62 KB)
EFA120D-SOT89
ETC
29.62 KB
Low distortion gaas power fet.
Excelics
PRELIMINARY DATA SHEET
EFA120D-SOT89
DC-4GHz
177-183 65-75
SOURCE
Low Distortion GaAs Power FET
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