FKD18N20 N-Channel MOSFET

Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
TO252 Pin Configuration The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON an.

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Datasheet Specifications

Part number: FKD18N20
Manufacturer: FETek
File Size: 662.89 KB
Datasheet: FKD18N20-FETek.pdf
Description: N-Channel MOSFET

Applications

* . The FKD18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10

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FKD18N20 N-Channel MOSFET FETek

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