FKD28N15 N-Channel MOSFET

Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
TO252 Pin Configuration The FKD28N15 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON an.

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Datasheet Specifications

Part number: FKD28N15
Manufacturer: FETek
File Size: 664.11 KB
Datasheet: FKD28N15-FETek.pdf
Description: N-Channel MOSFET

Applications

* The FKD28N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V

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FKD28N15 N-Channel MOSFET FETek

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