FKD3018 N-Channel MOSFET

Description

FETek Technology Corp.* 100% EAS Guaranteed * Green Device Available * Super Low Gate Charge * Excellent CdV/dt effect decline * .
The FKD3018 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.

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Datasheet Specifications

Part number: FKD3018
Manufacturer: FETek
File Size: 421.49 KB
Datasheet: FKD3018-FETek.pdf
Description: N-Channel MOSFET

Applications

* The FKD3018 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous

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FKD3018 N-Channel MOSFET FETek

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