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FKN2609 P-Channel MOSFET

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Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and lo.

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Datasheet Specifications

Part number
FKN2609
Manufacturer
FETek
File Size
534.51 KB
Datasheet
FKN2609-FETek.pdf
Description
P-Channel MOSFET

Applications

* The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Vol

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