FKN2611 P-Channel MOSFET

Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent CdV/dt effect decline * Advanced high cell density.
SOT 23 Pin Configurations The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the.

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Datasheet Specifications

Part number: FKN2611
Manufacturer: FETek
File Size: 543.88 KB
Datasheet: FKN2611-FETek.pdf
Description: P-Channel MOSFET

Applications

* The FKN2611 meet the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain

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FKN2611 P-Channel MOSFET FETek

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