FKQ2510 N-Channel MOSFET

Description

FETek Technology Corp.* Green Device Available * Super Low Gate Charge * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKQ2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and lo.

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Datasheet Specifications

Part number: FKQ2510
Manufacturer: FETek
File Size: 594.21 KB
Datasheet: FKQ2510-FETek.pdf
Description: N-Channel MOSFET

Applications

* The FKQ2510 meet the RoHS and Green Product requirement with full function reliability approved. TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Cont

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