FKR0004 N-Channel MOSFET

Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
TO251 Pin Configuration The FKR0004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the sy.

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Datasheet Specifications

Part number: FKR0004
Manufacturer: FETek
File Size: 531.46 KB
Datasheet: FKR0004-FETek.pdf
Description: N-Channel MOSFET

Applications

* The FKR0004 meet the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V

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FKR0004 N-Channel MOSFET FETek

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