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FKS0204 Dual N-Channel MOSFET

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Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKS0204 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and lo.

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Datasheet Specifications

Part number
FKS0204
Manufacturer
FETek
File Size
522.55 KB
Datasheet
FKS0204-FETek.pdf
Description
Dual N-Channel MOSFET

Applications

* The FKS0204 meets the RoHS and Green Product requirement with full function reliability approved. SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 1

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