FKUC2510
FETek
523.31kb
N-channel mosfet. The FKUC2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small powe
TAGS
📁 Related Datasheet
FKUC2544 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC2301 - P-Ch 20V Fast Switching MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC2302 - N-Ch 20V Fast Switching MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC2601 - P-Channel MOSFET
(FETek)
FETek Technology Corp.
FKUC2601
P-Ch 20V Fast Switching MOSFETs
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline .
FKUC2609 - P-Channel MOSFET
(FETek)
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC2611 - P-Ch 20V Fast Switching MOSFET
(FETek)
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technolo.
FKUC3107 - P-Channel MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technolo.
FKUC3502 - N-Ch 30V Fast Switching MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC3504 - N-Ch 30V Fast Switching MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technolo.
FKUC3601 - P-Channel MOSFET
(FETek)
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technolo.