FKUC2510 Datasheet - FETek

FKUC2510, N-Channel MOSFET

FETek Technology Corp.* Green Device Available * Super Low Gate Charge * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKUC2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and l.

Applications

* The FKUC2510 meet the RoHS and Green Product requirement with full function reliability approved. SOT23S Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS

FKUC2510-FETek.pdf