FKUC2609 P-Channel MOSFET

Description

FETek Technology Corp.* Super Low Gate Charge * Green Device Available * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKUC2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and l.

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Datasheet Specifications

Part number: FKUC2609
Manufacturer: FETek
File Size: 556.25 KB
Datasheet: FKUC2609-FETek.pdf
Description: P-Channel MOSFET

Applications

* The FKUC2609 meets the RoHS and Green Product requirement with full function reliability approved. SOT23S Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VG

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