Datasheet Details
| Part number | FNK22001 |
|---|---|
| Manufacturer | FNK |
| File Size | 1.07 MB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FNK22001 Datasheet
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Description
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Features
- VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.