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FNK2012E - N-Channel Power MOSFET

General Description

The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < 13mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number FNK2012E
Manufacturer FNK
File Size 880.72 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK2012E Datasheet

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Full PDF Text Transcription for FNK2012E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK2012E. For precise diagrams, tables, and layout, please refer to the original PDF.

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N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < 13mΩ @ VGS=4.