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FNK22001 - N-Channel Power MOSFET

General Description

The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number FNK22001
Manufacturer FNK
File Size 1.07 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK22001 Datasheet

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Full PDF Text Transcription for FNK22001 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK22001. For precise diagrams, tables, and layout, please refer to the original PDF.

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK22001 General Features ● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.