Datasheet Details
| Part number | FNK60H10 |
|---|---|
| Manufacturer | FNK |
| File Size | 859.20 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FNK60H10-FNK.pdf
|
| Part number | FNK60H10 |
|---|---|
| Manufacturer | FNK |
| File Size | 859.20 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
FNK60H10-FNK.pdf
|
The FNK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for g
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