FS3404 Datasheet - FOSAN

FS3404 SOT-23-3L Field Effect Transistor

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD FS3404 SOT-23-3L (SOT-23-3L Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N MOS MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ Junction Symbol BVDSS VGS ID IDM PD TJ Storage Temperature Tstg DEVICE MARKING FS3404=A4LA Max 30 +20 5.8 20 1500 150 -55to+150 Unit V V A A mW ℃ ℃ ANHUI FOSA.

FS3404-FOSAN.pdf