Click to expand full text
RFD14N05L, RFD14N05LSM, RFP14N05L
Data Sheet November 2004
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished www.DataSheet4U.com through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
14N05L Datasheet
