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14N25 - N-Channel Power MOSFET

Key Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Sem.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770. Ordering Information PART NUMBER PACKAGE BRAND RFD14N05 TO-251AA F14N05 RFD14N05SM TO-252AA F14N05 RFP14N05 TO-220AB RFP14N05 NOTE: When ordering, use the entire part number.