14N25 Datasheet | HARRIS

SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging - 14A, 50V - r DS(ON) = 0.100Ω - Temperature pensating PSPICE Model - Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE - UIS Rating Curve - +175o C Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the Mega FET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND GATE SOURCE RFD14N05 RFD14N05SM RFP14N05 TO-251AA TO-252AA TO-220AB F14N05 F14N05 RFP14N05 Symbol NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e.,...