2N4123, ON Semiconductor
2N4123, 2N4124
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage.
2N4123, Toshiba
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2N4123
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
FEATURES . Low Leakage Current
: ICB.
2N4123, Central Semiconductor
2N4123 2N4124 NPN 2N4125 2N4126 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4.
2N4124, NXP
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N4124 NPN general purpose transistor
Product specification Supersedes data of September 19.