33N25 Datasheet, Fdb33n25, Fairchild Semiconductor

33N25 Features

• Fdb33n25
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche test

PDF File Details

Part number:

33N25

Manufacturer:

Fairchild Semiconductor

File Size:

697.54kb

Download:

📄 Datasheet

Description:

Fdb33n25. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

33N25

Fairchild Semiconductor

📁 Related Datasheet

33N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanch.

33N10 - FQP33N10 (Fairchild Semiconductor)
FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

33N60DM6 - N-Channel Power MOSFET (STMicroelectronics)
STF33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package 23 1 TO-220FP D(2) G(1) S(3) AM15572v1_no_t.

3302 - (3302x - 3310x) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF.

3302F - (3302x - 3310x) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF.

3302UF - (3302x - 3310x) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF.

3306 - (3302x - 3310x) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF.

33063AP - MC33063AP (Motorola)
Order this document by MC34063A/D MC34063A MC33063A DC-to-DC Converter Control Circuits The MC34063A Series is a monolithic control circuit containin.

3306B - N-CHANNEL MOSFET (KIA)
KIA SEMICONDUCTORS 80A 60V N-CHANNEL MOSFET 1. Features n RDS(ON)= 7mΩ typ@ VGS=10V n Lead free and Green Device Available n Low Rds-on to Minimize .

3306F - (3302x - 3310x) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF.