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33N25

FDB33N25

33N25 Features

* 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V

* Low gate charge ( typical 36.8 nC)

* Low Crss ( typical 39 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis

33N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

33N25 Datasheet (697.54 KB)

Preview of 33N25 PDF

Datasheet Details

Part number:

33N25

Manufacturer:

Fairchild Semiconductor

File Size:

697.54 KB

Description:

Fdb33n25.

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33N25 FDB33N25 Fairchild Semiconductor

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