33N60DM6
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N-channel power mosfet. This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast
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33N10 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanch.
33N10 - FQP33N10
(Fairchild Semiconductor)
FQP33N10
April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
33N25 - FDB33N25
(Fairchild Semiconductor)
FDB33N25 250V N-Channel MOSFET
September 2005
UniFET
FDB33N25
250V N-Channel MOSFET Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate ch.
3302 - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3302F - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3302UF - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3306 - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
33063AP - MC33063AP
(Motorola)
Order this document by MC34063A/D
MC34063A MC33063A DC-to-DC Converter Control Circuits
The MC34063A Series is a monolithic control circuit containin.
3306B - N-CHANNEL MOSFET
(KIA)
KIA
SEMICONDUCTORS
80A 60V N-CHANNEL MOSFET
1. Features
n RDS(ON)= 7mΩ typ@ VGS=10V n Lead free and Green Device Available n Low Rds-on to Minimize .
3306F - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.