33N60DM6 Datasheet - STMicroelectronics

33N60DM6 N-Channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

33N60DM6 Features

* Order code VDS RDS(on) max. ID STF33N60DM6 600 V 128 mΩ 25 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

33N60DM6-STMicroelectronics.pdf