* Order code VDS RDS(on) max. ID STF33N60DM6 600 V 128 mΩ 25 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, input capacitance and resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
33N60DM6 Datasheet (260.36 KB)
33N60DM6
260.36 KB
N-channel power mosfet.
STF33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package
23 1 TO-220FP D(2)
G(1)
S(3)
AM15572v1_no_t.
📁 Related Datasheet
33N10 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanch.
33N10 - FQP33N10
(Fairchild Semiconductor)
FQP33N10
April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
33N25 - FDB33N25
(Fairchild Semiconductor)
FDB33N25 250V N-Channel MOSFET
September 2005
UniFET
FDB33N25
250V N-Channel MOSFET Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate ch.
3302 - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3302F - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3302UF - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
3306 - (3302x - 3310x) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3302 - 3310 3302F - 3310F 3302UF.
33063AP - MC33063AP
(Motorola)
Order this document by MC34063A/D
MC34063A MC33063A DC-to-DC Converter Control Circuits
The MC34063A Series is a monolithic control circuit containin.
