Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 80 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V.
- Critical DC electrical parameters specified at elevated temperature.
- High performance trench technology for extremely low RDS(ON).
- 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed
T.
6670AL_FairchildSemiconductor.pdf
