6673BZ FDS6673BZ

Fairchild Semiconductor

Description

www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Descri.
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: 6673BZ
Manufacturer: Fairchild Semiconductor
File Size: 436.00 KB
Datasheet: 6673BZ_FairchildSemiconductor.pdf
Description: FDS6673BZ

Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

6673BZ Distributors

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6673BZ FDS6673BZ Fairchild Semiconductor

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