6N80C 800V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP6N80C / FQPF6N80C * N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: 6N80C
Manufacturer: Fairchild Semiconductor
File Size: 1.03 MB
Datasheet: 6N80C-FairchildSemiconductor.pdf
Description: 800V N-Channel MOSFET

Features

* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V, ID = 2.75 A
* Low Gate Charge (Typ. 21 nC)
* Low Crss (Typ. 8 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai

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6N80C 800V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor 6N80C-like datasheet