6N80K5 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB).
Industry’s lowest RDS(on).
Industry’s best figure of merit (FoM).
Ultra low gate charge.
100% avalanche tested.
Zener-protected G(1) S(3) AM01476v1.

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Published: Sep 27, 2018 |