CNY171M - Phototransistor Optocouplers

Fairchild Semiconductor

CNY171M Datasheet Preview — Preview of CNY171M PDF

Datasheet Details

Part number	CNY171M
Manufacturer	Fairchild ↗ Semiconductor
File Size	307.69 KB
Description	Phototransistor Optocouplers
Datasheet	CNY171M-FairchildSemiconductor.pdf

CNY171M Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

📁 CNY171M Similar Datasheet

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Other Datasheets by Fairchild Semiconductor

CNY171 - (CNY171 - CNY174) Phototransistor Optocouplers
CNY17-1 - PHOTOTRANSISTOR OPTOCOUPLERS
CNY17-2 - PHOTOTRANSISTOR OPTOCOUPLERS
CNY17-3 - PHOTOTRANSISTOR OPTOCOUPLERS
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CNY172 - (CNY171 - CNY174) Phototransistor Optocouplers

Published: Oct 8, 2014 |