F10U150S, Fairchild Semiconductor
FFPF10U150S
FFPF10U150S
Features
• High voltage and high reliability • High speed switching • Low forward voltage
Applications
• Suitable for dampe.
F10U170S, Fairchild Semiconductor
FFAF10U170S
FFAF10U170S
Features
• High voltage and high reliability • High speed switching • Low forward voltage
Applications
• Suitable for dampe.
F10U60DN, Fairchild Semiconductor
FFPF10U60DN
FFPF10U60DN
Features
• High voltage and high reliability • High speed switching .. • Low forward voltage
Applications
•.
F10U60S, Fairchild Semiconductor
FFPF10U60S
FFPF10U60S
Features
• High voltage and high reliability • High speed switching • Low forward voltage
Applications
• • • • General purpose.
F10UP60S, Fairchild Semiconductor
FFPF10UP60S — Ultrafast Diode
FFPF10UP60S
10 A, 600 V Ultrafast Diode
Features
• Ultrafast Recovery trr = 40 ns (@ IF = 1 A) • Max Forward Voltage, V.
F1000LC120, IXYS
WESTCODE
An IXYS Company
Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1000LC120
Old Type .
F1001, Polyfet RF Devices
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .