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F1001 Datasheet - Polyfet RF Devices

RF POWER VDMOS TRANSISTOR

F1001 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance F1001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RAT

F1001 Datasheet (37.37 KB)

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Datasheet Details

Part number:

F1001

Manufacturer:

Polyfet RF Devices

File Size:

37.37 KB

Description:

Rf power vdmos transistor.

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F1001 POWER VDMOS TRANSISTOR Polyfet RF Devices

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