F1001 Datasheet - Polyfet RF Devices

F1001, RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance F1001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RAT

F1001_PolyfetRFDevices.pdf