Part number:
F1003
Manufacturer:
Polyfet RF Devices
File Size:
37.96 KB
Description:
Rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM
F1003
Polyfet RF Devices
37.96 KB
Rf power vdmos transistor.
📁 Related Datasheet
F1000LC120 - Extra Fast Recovery Diode
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Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1000LC120
Old Type .
F1001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
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