Part number:
F1006
Manufacturer:
Polyfet RF Devices
File Size:
37.66 KB
Description:
Rf power vdmos transistor
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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TDK Corporation | CLF10060NIT-150M-D | FIXED IND 15UH 3.3A 36 MOHM SMD | DigiKey | 36 | 100 units |
$0.85
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🛒 Buy Now |
F1006
Polyfet RF Devices
37.66 KB
Rf power vdmos transistor
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM
📁 Related Datasheet
F1000LC120 - Extra Fast Recovery Diode
(IXYS)
WESTCODE
An IXYS Company
Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1000LC120
Old Type .
F1001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
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