Datasheet4U Logo Datasheet4U.com

F1006 Datasheet - Polyfet RF Devices

F1006 RF POWER VDMOS TRANSISTOR

F1006 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

F1006 Datasheet (37.66 KB)

Preview of F1006 PDF
F1006 Datasheet Preview Page 2

Datasheet Details

Part number:

F1006

Manufacturer:

Polyfet RF Devices

File Size:

37.66 KB

Description:

Rf power vdmos transistor.

📁 Related Datasheet

F1000LC120 Extra Fast Recovery Diode (IXYS)

F1001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F100122 9-BIT BUFFER (National Semiconductor)

F100124 Hex TTL-to-ECL Translator (National Semiconductor)

F100125 Hex ECL-to-TTL Translator (National Semiconductor)

F100136 4-Stage Counter / Shift Register (National Semiconductor)

F100164 16 Input Multiplexer (Fairchild Semiconductor)

F100164 16 Input Multiplexer (National Semiconductor)

TAGS

F1006 POWER VDMOS TRANSISTOR Polyfet RF Devices

F1006 Distributor